vertical-structure FET

См. также в других словарях:

• MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up …   Wikipedia

• Field-effect transistor — FET redirects here. For other uses, see FET (disambiguation). High power N channel field effect transistor The field effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a… …   Wikipedia

• Carbon nanotube — Not to be confused with Carbon fiber. Part of a series of articles on Nanomaterials Fullerenes …   Wikipedia

• Mathematics and Physical Sciences — ▪ 2003 Introduction Mathematics       Mathematics in 2002 was marked by two discoveries in number theory. The first may have practical implications; the second satisfied a 150 year old curiosity.       Computer scientist Manindra Agrawal of the… …   Universalium

• Francoist Spain — Estado Español Spanish State ← …   Wikipedia

• Multigate device — A multigate device or multiple gate field effect transistor(MuGFET) refers to a MOSFET which incorporates more than one gate into a single device. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces …   Wikipedia

• Espagne franquiste — État espagnol Estado Español es 1939 – 1975 …   Wikipédia en Français

• Russia — /rush euh/, n. 1. Also called Russian Empire. Russian, Rossiya. a former empire in E Europe and N and W Asia: overthrown by the Russian Revolution 1917. Cap.: St. Petersburg (1703 1917). 2. See Union of Soviet Socialist Republics. 3. See Russian… …   Universalium

• Insulated-gate bipolar transistor — The insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device, noted for high efficiency and fast switching. It switches electric power in many modern appliances: electric cars, variable speed refrigerators, air… …   Wikipedia

• COMFET — Transistor bipolaire à grille isolée Symbole usuel de l’IGBT Le transistor bipolaire à grille isolée (IGBT, de l’anglais Insulated Gate Bipolar Transistor) est un dispositif semi conducteur de la famille des transistors qui est utilisé comme… …   Wikipédia en Français

• GEMFET — Transistor bipolaire à grille isolée Symbole usuel de l’IGBT Le transistor bipolaire à grille isolée (IGBT, de l’anglais Insulated Gate Bipolar Transistor) est un dispositif semi conducteur de la famille des transistors qui est utilisé comme… …   Wikipédia en Français